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BU508DF 数据表(PDF) 1 Page - Comset Semiconductor |
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BU508DF 数据表(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() NPN BU508DF 15/10/2012 COMSET SEMICONDUCTORS 1 | 3 SEMICONDUCTORS SILICON DIFFUSED POWER TRANSISTOR The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated efficiency diode. It is intended for high voltage, high-speed. Primarily for use in horizontal deflection circuits of colour television receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current 8 A ICM Collector Current Peak 15 A IB Base Current 4 A IBM Base Current Peak 6 A PT Total Dissipation @ Tmb < 25° 34 W tJ Junction Temperature 150 °C ts Storage Temperature range -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Conditions Value Unit Typ. Max RthJC Junction To Heatsink Without Heatsink Compound - 3.7 K/W Junction To Heatsink With Heatsink Compound - 2.8 Junction Ambient In Free Air 35 - |
类似零件编号 - BU508DF |
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类似说明 - BU508DF |
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