BU508DF datasheet(2/3 Pages) COMSET

部件名	BU508DF

功能描述	SILICON DIFFUSED POWER TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

制造商	COMSET [Comset Semiconductor]

网页	http://comset.halfin.com

标志

2 / 3 page

NPN BU508DF

15/10/2012

COMSET SEMICONDUCTORS

2 | 3

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO

Collector-Emitter

Breakdown Voltage

IC= 100 mA, IB=0

L= 25mH

700

ICES

Collector Cutoff Current

VBE =0, VCE = 1500 V

Tj =125°C

IEBO

Emitter Cutoff Current

VEB= 5 V, IC=0

300

VCE(SAT)

Collector-Emitter

saturation Voltage

IC= 4.5 A, IB= 1.6 A

VBE(SAT)

Base-Emitter saturation

Voltage

IC= 4.5 A, IB= 2 A

1.1

Diode Forwardvoltage

IF= 4.5 A

1.6

hFE

DC Current Gain

IC= 500 mA, VCE = 5 V

COB

Output Capacitance

VCB = 10 V, IE=0, f= 1MHz

Transition Frequency

VCE= 5 V, IC= 100 mA

MHz

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