TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S

30/10/2012

COMSET SEMICONDUCTORS

1 | 4

SEMICONDUCTORS

SILICON BIDIRECTIONAL TRIODE THYRISTOR

• 4 A RMS

• Glass Passivated Wafer

• 100 V to 800 V Off-State Voltage

• Sensitive gate triacs

• Compliance to ROHS

DESCRIPTION

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state

to the on-state by either polarity of gate signal with main Terminal 2 at either polarity

.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

A

B

D

M

S

N

Repetitive peak off-state voltage

(see Note1)

100 200 400 600 700 800

V

Full-cycle RMS on-state current at

(or below) 70°C case temperature

(see note2)

4

A

Peak on-state surge current

full-sine-wave (see Note3)

25

A

Peak on-state surge current

half-sine-wave (see Note4)

30

A

Peak gate current

± 0.2

A

Peak gate power dissipation at

(or below) 85°C case temperature

(pulse width ≤200 µs)

1.3

W

Average gate power dissipation at

(or below) 85°C case (see Note5)

0.3

W

Operating case temperature range

-40 to +110

°C

Storage temperature range

-40 to +125

°C

Lead temperature 1.6 mm from case

for 10 seconds

230

°C