TIC206N datasheet(3/4 Pages) COMSET

3 / 4 page

TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S

30/10/2012

COMSET SEMICONDUCTORS

3 | 4

SEMICONDUCTORS

Notes:

1. These values apply bidirectionally for any value of resistance between the gate and Main

Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C

derate linearly to 110°C case temperature at the rate of 160 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below)

the rated value of on-state current. Surge may be repeated after the device has returned

to original thermal equilibrium. During the surge, gate control may be lost.

4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below)

the rated value of on-state current. Surge may be repeated after the device has returned

to original thermal equilibrium. During the surge, gate control may be lost.

5. This value applies for a maximum averaging time of 20 ms.

6. This parameters must be measured using pulse techniques, tW = ≤1µs, duty cycle ≤ 2 %,

voltage-sensing

contacts, separate from the courrent-carrying contacts are located

within 3.2mm (1/8 inch) from de device body.

7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator

with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.

MECHANICAL DATA CASE TO-220

TIC206N 数据表(PDF) 3 Page - Comset Semiconductor