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CPC9909NETR 数据表(PDF) 5 Page - IXYS Corporation

部件名 CPC9909NETR
功能描述  High Effciency,Off-line, High Brightness LED Driver
PDF  12 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

CPC9909NETR 数据表(HTML) 5 Page - IXYS Corporation

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INTEGRATED CIRCUITS DIVISION
CPC9909
R03
www.ixysic.com
5
1.4 Recommended Operating
Conditions
1.5 Electrical Characteristics
Unless otherwise specified, all electrical specifications are provided for TA=25C.
1.6 Thermal Characteristics
1 Use of a four-layer PCB can improve thermal dissipation (reference EIA/JEDEC JESD51-5).
Parameter
Symbol
Minimum
Typical
Maximum
Unit
Input Voltage Range
VIN
12
-
550
VDC
PWMD Frequency
fPWMD
-
500
-
Hz
Operating Temperature
TA
-40
-
+85
°C
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Unit
Input
Input Voltage Range
DC Input Voltage
VIN
8
-
550
VDC
Shut-Down Mode Supply Current
VIN=8 to 550V, PWMD to GND
IIN
-0.3
0.6
mA
Regulator
Voltage Regulator Output
VIN=15V to 550V, IDD=0, IGATE=0
VDD
7.2
7.8
8.4
VDC
VDD Current Available
for External Circuitry
-
IDD
--
2
mA
VDD Load Regulation
VIN=15V, IDD=1mA
V
DD
-
150
200
mV
PWM Dimming
PWMD Input Low Voltage
VIN=8V to 550V
VPWMD(low)
--
0.5
V
PWMD Input High Voltage
VIN=8V to 550V
VPWMD(high)
2.4
-
-
PWMD Pull-Down Resistance
-
RPWMD
80
115
150
k
Current Sense Comparator
Current Sense Input Current
Input Low
CS=0V
IIL
-5
-
5
A
Input High
CS=VDD
IIH
-5
0
5
Current Sense Threshold Voltage
-40°C < TA < 85°C, VIN=15V to 550V
VCS(high)
200
250
300
mV
-55°C < TA < -40°C, VIN=15V to 550V
180
-
300
Current Sense Blanking Interval
RT=400k
tBLANK
-
400
-
ns
Delay from CS Trip to Gate Low
RT=400k
tDELAY
-
300
-
ns
Minimum Off-Time One-Shot
Minimum Off-Time
RT=400k
toff
6-8
s
Gate Driver
Gate High Output Voltage
IOUT=-10mA
VGATE(high)
VDD-0.3
VDD-0.06
-
V
Gate Low Output Voltage
IOUT=+10mA
VGATE(low)
-
0.03
0.3
Gate Output Rise Time
CGATE=500pF
tRISE
-16-
ns
Gate Output Fall Time
CGATE=500pF
tFALL
-7-
Parameter
Package
Symbol
Minimum
Typical
Maximum
Unit
Thermal Resistance,
Junction-to-Ambient
SOIC-8 With Thermal Pad (NE) 1
RJA
-50-
°C/W
SOIC-8 W/O Thermal Pad (N)
-
128
-



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