Rev. 1.0 / Nov. 2012

3

Description

III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large mem-

ory density and high bandwidth. SK hynix 4Gb DDR3 SDRAMs offer fully synchronous operations refer-

enced to both rising and falling edges of the clock. While all addresses and control inputs are latched on

the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are

sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched

to achieve very high bandwidth.

Device Features and Ordering Information

FEATURES

• VDD=VDDQ=1.5V + - 0.075V

• Fully differential clock inputs (CK, CK) operation

• Differential Data Strobe (DQS, DQS)

• On chip DLL align DQ, DQS and DQS transition with CK



transition

• DM masks write data-in at the both rising and falling



edges of the data strobe

• All addresses and control inputs except data, data

strobes and data masks latched on the rising edges of

the clock

• Programmable CAS latency 6, 7, 8, 9, 10 and 11, 13



supported

• Programmable additive latency 0, CL-1, and CL-2



supported

• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9

• Programmable burst length 4/8 with both nibble

sequential and interleave mode

• BL switch on the fly

• 8banks

• JEDEC standard 78ball FBGA(x4/x8), 96ball FBGA

(x16)

• Driver strength selected by EMRS

• Dynamic On Die Termination supported

• Asynchronous RESET pin supported

• ZQ calibration supported

• TDQS (Termination Data Strobe) supported (x8 only)

• Write Levelization supported

• 8 bit pre-fetch

• This product in compliance with the RoHS directive.