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MOS6020 数据表(PDF) 4 Page - Microchip Technology |
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MOS6020 数据表(HTML) 4 Page - Microchip Technology |
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4 / 34 page  MCP16321/2 DS22285A-page 4 © 2011 Microchip Technology Inc. PFM Mode Feedback VFB-PFM —VOUT + 1% — V EN Input Characteristics EN Input Logic High VIH 2.2 —— V EN Input Logic Low VIL —— 0.8 V EN Input Hysteresis VEN-HYST —480 — mV EN Input Leakage Current IENLK —3.5 — µA VEN = 5V —-1.5 — µA VEN = 0V Soft-Start Time tSS —4 — ms Switching Characteristics Switching Frequency fSW 0.9 1 1.1 MHz Open Loop VFB Low Maximum Duty Cycle DCMAX 95 97 99 % Open Loop VFB Low Note 1 Minimum Duty Cycle — 7 — % NMOS Low-Side Switch On Resistance Low-Side RDS(ON) —120 — m Ω NMOS High-Side Switch On Resistance High-Side RDS(ON) —180 — m Ω NMOS High-Side Switch Current Limit IN(MAX) 1.4 1.8 2.4 A MCP16321 2.4 2.8 3.4 A MCP16322 PG Output Characteristics PG Low-level Output Voltage PGIL —— 0.01 VIPG = -0.3 mA PG High-Level Output Leak- age Current IPGLK —0.5 — µA VPG = 5V PG Release Timer tPG —10 — ms VOUT Undervoltage Threshold VOUT-UV 91% VOUT 93% VOUT 95% VOUT VOUT Undervoltage Hysteresis VOUT-UV_HYST —1.5% VOUT — VOUT Overvoltage Threshold VOUT-OV —103% VOUT — VOUT Overvoltage Hysteresis VOUT-OV_HYST —1% VOUT — Thermal Characteristics Thermal Shutdown Die Temperature TSD —170 — °C Die Temperature Hysteresis TSDHYS —10 — °C DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN =12V, VOUT = 3.3V, IOUT = 300 mA, L= 4.7 µH, COUT =2x22 µF, CIN =2x10µF. Boldface specifications apply over the TJ range of -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions Note 1: Regulator SW pin is forced off for 240 ns every 8 cycles to ensure the BOOST cap is replenished. |
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