MAT01 datasheet(4/12 Pages) AD

4 / 12 page

MAT01

Data Sheet

Rev. C | Page 4 of 12

VCB = 15 V, IC = 10 µA, −55°C ≤ TA ≤ +125°C, unless otherwise noted.

Table 2.

Parameter

Symbol

Test Conditions/Comments

MAT01AH

MAT01GH

Unit

Min

Typ

Max

Min

Typ

Min

OFFSET VOLTAGE/CURRENT

Offset Voltage

VOS

0.06

0.15

0.14

0.70

Average Offset Voltage Drift1

TCVOS

0.15

0.50

0.35

1.8

µV/°C

Offset Current

IOS

0.9

8.0

1.5

15.0

Average Offset Current Drift2

TCIOS

150

pA/°C

BIAS CURRENT

ΙΒ

130

CURRENT GAIN

hFE

167

400

300

LEAKAGE CURRENT

Collector to Base Leakage Current

ICBO

TA = 125°C, VCB = 30 V, IE = 03

200

Collector to Emitter Leakage Current

ICES

TA = 125°C, VCE = 30 V, VBE = 01, 3

300

400

Collector to Collector Leakage Current

ICC

TA = 125°C, VCC = 30 V1

200

400

Guaranteed by VOS test

(

)

for

TCV

≅

, T = 298 K for TA = 25°C.

Guaranteed by IOS test limits over temperature.

The collector to base (ICBO) and collector to emitter (ICES) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a

potential that is lower than either collector voltage.

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