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MAT01 数据表(PDF) 3 Page - Analog Devices

部件名 MAT01
功能描述  Matched Monolithic Dual Transistor
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

MAT01 数据表(HTML) 3 Page - Analog Devices

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Data Sheet
MAT01
Rev. C | Page 3 of 12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VCB = 15 V, IC = 10 µA, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
MAT01AH
MAT01GH
Unit
Min
Typ
Max
Min
Typ
Min
VOLTAGE
Breakdown Voltage
BVCEO
IC = 100 µA
45
45
V
Offset Voltage
VOS
0.04
0.1
0.10
0.5
mV
Offset Voltage Stability
First Month1
VOS/Time
2.0
2.0
µV/Mo
Long Term2
0.2
0.2
µV/Mo
CURRENT
Offset Current
IOS
0.1
0.6
0.2
3.2
nA
Bias Current
IB
13
20
18
40
nA
Current Gain
hFE
IC = 10 nA
590
430
IC = 10 µA
500
770
250
560
IC = 10 mA
840
610
Current Gain Match
∆hFE
IC = 10 µA
0.7
3.0
1.0
8.0
%
100 nA ≤ IC ≤ 10 mA
0.8
1.2
%
NOISE
Low Frequency Noise Voltage
en p-p
0.1 Hz to 10 Hz3
0.23
0.4
0.23
0.4
µV p-p
Broadband Noise Voltage
en rms
1 Hz to 10 kHz
0.60
0.60
µV rms
Noise Voltage Density
en
fO = 10 Hz3
7.0
9.0
7.0
9.0
nV/√Hz
fO = 100 Hz3
6.1
7.6
6.1
7.6
nV/√Hz
fO = 1000 Hz3
6.0
7.5
6.0
7.5
nV/√Hz
OFFSET VOLTAGE/CURRENT
Offset Voltage Change
∆VOS/∆VCB
0 ≤ VCB ≤ 30 V
0.5
3.0
0.8
8.0
µV/V
Offset Current Change
∆IOS/∆VCB
0 ≤ VCB ≤ 30 V
2
15
3
70
pA/V
LEAKAGE
Collector to Base Leakage Current
ICBO
VCB = 30 V, IE = 04
15
50
25
200
pA
Collector to Emitter Leakage Current
ICES
VCE = 30 V, VBE = 04, 5
50
200
90
400
pA
Collector to Collector Leakage Current
ICC
VCC = 30 V5
20
200
30
400
pA
SATURATION
Collector Saturation Voltage
VCE(SAT)
IB = 0.1 mA, IC = 1 mA
0.12
0.20
0.12
0.25
V
IB = 1 mA, IC = 10 mA
0.8
0.8
V
GAIN BANDWIDTH PRODUCT
fT
VCE = 10 V, IC = 10 mA
450
450
MHz
CAPACITANCE
Output Capacitance
COB
VCB = 15 V, IE = 0
2.8
2.8
pF
Collector to Collector Capacitance
CCC
VCC = 0
8.5
8.5
pF
1 Exclude first hour of operation to allow for stabilization.
2
Parameter describes long-term average drift after first month of operation.
3
Sample tested.
4
The collector to base (ICBO) and collector to emitter (ICES) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a
potential that is lower than either collector voltage.
5
ICC and ICES are guaranteed by measurement of ICBO.



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