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STPS2L60 数据表(PDF) 2 Page - STMicroelectronics |
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STPS2L60 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STPS2L60 2/9 Doc ID 9173 Rev 6 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.43 x IF(AV) + 0.06 IF 2 (RMS) Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) Forward rms voltage 10 A IF(AV) Average forward current SMB flat TL = 130 °C δ = 0.5 2A SMA TL = 115 °C δ = 0.5 DO-41 TL = 110 °C δ = 0.5 IFSM Surge non repetitive forward current tp =10 ms sinusoidal 75 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 1600 W Tstg Storage temperature range -65 to + 150 °C Tj Maximum operating junction temperature (1) 1. condition to avoid thermal runaway for a diode on its own heatsink 150 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 3. Thermal resistance Symbol Test conditions Value Unit Rth(j-l) Junction-lead SMB flat 15 °C/W SMA 25 Lead length = 10 mm DO-41 30 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 380 µs, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM 100 µA Tj = 100 °C 2 10 mA VF (1) Forward voltage drop Tj = 25 °C IF = 2 A 0.60 V Tj = 125 °C 0.51 0.55 Tj = 25 °C IF = 4 A 0.77 Tj = 125 °C 0.62 0.67 dPtot dTj < 1 Rth(j-a) |
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