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STPS30M100ST 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS30M100ST
功能描述  100 V, 30 A power Schottky rectifier
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS30M100ST 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS30M100S
2/10
Doc ID 15523 Rev 3
1
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
Forward rms current
60
A
IF(AV)
Average forward current
δ = 0.5
Tc = 125 °C
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
300
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
26400
W
VARM
(1)
1.
Refer to Figure 14.
Maximum repetitive peak avalanche
voltage
tp < 1 µs Tj < 150 °C
IAR < 66 A
120
V
VASM
(1)
Maximum single pulse peak avalanche
voltage
tp < 1 µs Tj < 150 °C
IAR < 66 A
120
V
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (2)
2.
condition to avoid thermal runaway for a diode on its own heatsink
150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB, I2PAK
1
°C/W
TO-220FPAB
4
Table 4.
Static electrical characteristics with all leads connected on board
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
--
175
µA
Tj = 125 °C
-
20
50
mA
Tj = 25 °C
VR = 70 V
-
-
60
µA
Tj = 125 °C
-
10
20
mA
VF
(2)
2.
Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 5 A
-
0.475
-
V
Tj = 125 °C
-
0.385
-
Tj = 25 °C
IF = 10 A
-
0.555
-
Tj = 125 °C
-
0.475
--
Tj = 25 °C
IF = 15 A
-
0.620
0.660
Tj = 125 °C
-
0.525
0.565
Tj = 25 °C
IF = 30 A
-
0.740
0.800
Tj = 125 °C
-
0.605
0.655
dPtot
dTj
---------------
1
Rth j
a
()
--------------------------
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