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STPS30M100ST 数据表(PDF) 3 Page - STMicroelectronics |
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STPS30M100ST 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() STPS30M100S Characteristics Doc ID 15523 Rev 3 3/10 To evaluate the conduction losses use the following equation: P = 0.475 x IF(AV) + 0.006 x IF 2 (RMS) Figure 2. Conduction losses versus average current Figure 3. Average forward current versus ambient temperature ( δ = 0.5) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 4 8 12162024283236 PF(av)(W) δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 T δ=t /T p tp I (av)(A) F 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W T δ=tp/T tp T (°C) amb Figure 4. Normalized avalanche power derating versus pulse duration Figure 5. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(tp) P (1 µs) ARM ARM 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 T (°C) j P(Tj) P (25 °C) ARM ARM Figure 6. Non repetitive surge peak forward current versus overload duration (maximum values) Figure 7. Relative variation of thermal impedance junction to case versus pulse duration 0 50 100 150 200 250 300 350 1.E-03 1.E-02 1.E-01 1.E+00 IM(A) Tc=25°C Tc=75°C Tc=125°C IM t δ=0.5 t(s) T0-220AB / I2PAK 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse Zth(j-c)/Rth(j-c) tp(s) T0-220AB / I2PAK |
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