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STTH20L03CT 数据表(PDF) 2 Page - STMicroelectronics

部件名 STTH20L03CT
功能描述  High frequency secondary rectifier
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH20L03CT 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH20L03C
2/9
Doc ID 023115 Rev 1
1
Characteristics
When diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.8 x IF(AV) + 0.015 IF
2
(RMS))
Table 2.
Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
300
V
IF(RMS)
Forward rms current
30
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 155 °C
Per diode
Per device
10
20
A
Tc = 150 °C
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
150
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Operating junction temperature range
-40 to +175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value (max)
Unit
Rth(j-c)
Junction to case
Per diode
1.5
°C/W
Total
1.0
Rth(c)
Coupling
0.5
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
10
µA
Tj = 125 °C
10
100
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 10 A
0.95
1.2
V
Tj = 125 °C
0.8
0.95
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 µs, δ < 2%



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