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STTH20L03CT 数据表(PDF) 2 Page - STMicroelectronics |
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STTH20L03CT 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STTH20L03C 2/9 Doc ID 023115 Rev 1 1 Characteristics When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.015 IF 2 (RMS)) Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current, δ = 0.5 Tc = 155 °C Per diode Per device 10 20 A Tc = 150 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 150 A Tstg Storage temperature range -65 to + 175 °C Tj Operating junction temperature range -40 to +175 °C Table 3. Thermal resistance Symbol Parameter Value (max) Unit Rth(j-c) Junction to case Per diode 1.5 °C/W Total 1.0 Rth(c) Coupling 0.5 Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM 10 µA Tj = 125 °C 10 100 VF (2) Forward voltage drop Tj = 25 °C IF = 10 A 0.95 1.2 V Tj = 125 °C 0.8 0.95 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% |
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