STTH20L03CT datasheet(3/9 Pages) STMICROELECTRONICS

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STTH20L03C

Characteristics

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Table 5.

Dynamic electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR= 30 V

dIF/dt = -100 A/µs

Tj = 125 °C

IF = 10 A, VR = 200 V

dIF/dt = -200 A/µs

IRM

Reverse recovery current

Tj = 125 °C

IF = 10 A, VR = 200 V

dIF/dt = -200 A/µs

912

Sfactor

Softness factor

0.3

QRR

Reverse recovery charges

Tj = 125 °C

IF = 10 A, VR = 200 V

dIF/dt = -200 A/µs

250

375

tfr

Forward recovery time

Tj = 25 °C

IF = 10 A, VFR = 1.05 V

dIF/dt = 100 A/µs

200

VFP

Forward recovery voltage

2.5

3.5

Figure 1.

Conduction losses versus average

forward current (per diode)

Figure 2.

Forward voltage drop versus

forward current (per diode)

PF(AV)(W)

468

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1.0

IF(AV)(A)

δ=tp/T

IFM(A)

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

Tj=125 °C

(Maximum values)

Tj=125 °C

(Typical values)

Tj=25 °C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values, per

diode)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

IRM(A)

100

150

200

250

300

350

400

450

500

IF=IF(AV)

VR=200 V

Tj=125 °C

dIF/dt(A/µs)

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