TPDV1240RG datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

Characteristics

TPDVxx40

2/7

Doc ID 18270 Rev 1

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (180° conduction angle)

Tc = 75 °C

ITSM

Non repetitive surge peak on-state

current

tp = 2.5 ms

Tj = 25 °C

590

tp = 8.3 ms

370

tp = 10 ms

350

I2tI2t value for fusing

tp = 10 ms

Tj = 25 °C

610

A2S

dI/dt

Critical rate of rise of on-state current

IG = 500 mA , dIG/dt = 1 A/µs

Repetitive F = 50 Hz

A/µs

Non repetitive

100

VDRM

VRRM

Repetitive peak off-state voltage

TPDV640

Tj = 125 °C

600

TPDV840

800

TPDV1240

1200

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Maximum lead temperature for soldering during 10s at 2mm from case

260

°C

VINS(RMS)

(1)

Insulation rms voltage

2500

A1, A2, gate terminals to case for 1 minute

Table 3.

Electrical Characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

IGT

VD = 12 V DC, RL = 33 Ω

I - II - III

MAX.

200

VGT

MAX.

1.5

VGD

VD = VDRM RL = 3.3 kΩ

Tj = 125 °C

I - II - III

MIN.

0.2

tgt

VD = VDRM IG = 500 mA dIG/dt = 3 A/µs

I - II - III

TYP.

2.5

µs

(1)

IT = 500 mA Gate open

MAX.

IG = 1.2 x IGT

I - III

TYP.

100

200

dV/dt

Linear slope up to:

VD = 67 % VDRM Gate open

Tj = 125 °C

MIN.

500

V/µs

VTM

(1)

ITM = 35 A tp = 380 µs

MAX.

1.8

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

MAX.

µA

Tj = 125 °C

(dI/dt)c (1)

(dV/dt)c = 200 V/µs

Tj = 125 °C

MIN.

A/ms

(dV/dt)c = 10 V/µs

142

For either polarity of electrode A2 voltage with reference to electrode A1.

TPDV1240RG 数据表(PDF) 2 Page - STMicroelectronics

TPDV1240RG 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

数据表下载

链接网址

TPDV1240RG 数据表(PDF) 2 Page - STMicroelectronics

TPDV1240RG 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

数据表 下载

链接网址

数据表下载