TPDVxx40

Characteristics

Doc ID 18270 Rev 1

3/7

Table 4.

Gate characteristics (maximum values)

Symbol

Parameter

Value

Unit

Average gate power dissipation

1

W

Peak gate power dissipation

40

W

Peak gate current

8

A

Peak positive gate voltage

16

V

Table 5.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to ambient

50

°C/W

Junction to case for DC

1.2

°C/W

Junction to case for 360 °Conduction angle (F = 50 Hz)

0.9

°C/W

Figure 1.

Max. rms power dissipation versus

on-state rms current (F = 50 Hz).

(curves limited by (dI/dt)c)

Figure 2.

Max. rms power dissipation and

max. allowable temperatures

P(W)

I

(A)

T(RMS)

α = 180°

α = 120°

α = 90°

40

50

60

30

20

10

0

0

5

10

15

20

25

30

35

40

α = 30°

α = 60°

180°

α

α

T

(°C)

amb

0

20

40

60

80

100

120

140

125

85

75

95

115

105

P(W)

T

(°C)

case

40

50

60

30

20

10

0

R = 0.75°C/W

th

R = 0.5°C/W

th

R = 0.25°C/W

th

R = 0°C/W

th

Figure 3.

On-state rms current versus case

temperature

Figure 4.

Relative variation of thermal

impedance versus pulse duration

I

(A)

T(RMS)

30

40

50

20

10

0

025

75

50

100

125

T

(°C)

case

α = 180°

K=[Z

/R

th(j-c)

t (s)

p

1.00

0.10

0.01

0.0

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3