| 数据搜索系统,热门电子元器件搜索 |
|
MAT12 数据表(PDF) 1 Page - Analog Devices |
|
|
|||||||||||||||||||||||||||||
MAT12 数据表(HTML) 1 Page - Analog Devices |
|
1 / 12 page ![]() Audio, Dual-Matched NPN Transistor MAT12 Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringementsof patentsorother rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved. FEATURES Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz PIN CONFIGURATION NOTE 1. SUBSTRATE IS CONNECTED TO CASE ON TO-78 PACKAGE. 2. SUBSTRATE IS NORMALLY CONNECTED TO THE MOST NEGATIVE CIRCUIT POTENTIAL, BUT CAN BE FLOATED. C1 E1 B1 C2 E2 B2 1 6 2 5 3 4 Figure 1. 6-Lead TO-78 GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the MAT12 can achieve outstanding signal- to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10 μV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction. The MAT12 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the MAT12 does not need offset trimming in most circuit applications. The MAT12 is a good replacement for the MAT02, and its performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C. |
类似零件编号 - MAT12 |
|
类似说明 - MAT12 |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |