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2SA1941-R 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SA1941-R 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 2SA1941 2010-11-02 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −140 V, IE = 0 ― ― −5.0 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −5.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = −50 mA, IB = 0 −140 ― ― V hFE (1) (Note) VCE = −5 V, IC = −1 A 55 ― 160 DC current gain hFE (2) VCE = −5 V, IC = −5 A 35 83 ― Collector-emitter saturation voltage VCE (sat) IC = −7 A, IB = −0.7 A ― −0.8 −2.0 V Base-emitter voltage VBE VCE = −5 V, IC = −5 A ― −1.0 −1.5 V Transition frequency fT VCE = −5 V, IC = −1 A ― 30 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 320 ― pF Note: hFE (1) classification R: 55 to 110, O: 80 to 160 Marking A1941 TOSHIBA Lot No. Characteristics indicator NOTE 2 Part No. (or abbreviation code) Note 2 : A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. |
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