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2SA1941-R 数据表(PDF) 3 Page - Toshiba Semiconductor |
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2SA1941-R 数据表(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SA1941 2010-11-02 3 Collector current IC (A) VCE (sat) – IC Collector-emitter voltage VCE (V) IC – VCE IC – VBE Collector current IC (A) hFE – IC Base-emitter voltage VBE (V) Collector-emitter voltage VCE (V) Safe Operating Area −10 −6 −4 −2 0 IB = −10 mA −20 Common emitter Tc = 25°C −8 −4 −6 −8 −2 0 −10 −30 −40 −50 −100 −150 −200 −250 −0.8 −1.2 −1.6 −2.0 −10 −6 −4 −2 0 Common emitter VCE = −5 V −8 −0.4 0 Tc = 100°C −25°C 25°C 100 10 −0.1 −1 1 Common emitter VCE = −5 V −0.01 1000 −10 Tc = 100°C Tc = −25°C Tc = 25°C −10 −1 −0.1 −0.01 −0.01 Tc = 100°C Tc = −25°C Tc = 25°C −0.1 −1 −10 Common emitter IC/IB = 10 −100 −50 −0.05 −2 −30 −1 −10 −30 −100 −300 −0.5 −1000 −3 −5 −10 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max DC operation Tc = 25°C 1 ms* 10 ms* 100 ms* −0.3 −0.1 −3 |
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