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ADR430 数据表(PDF) 16 Page - Analog Devices |
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ADR430 数据表(HTML) 16 Page - Analog Devices |
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16 / 24 page ![]() ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 Rev. J | Page 16 of 24 THEORY OF OPERATION The ADR43x series of references uses a reference generation technique known as XFET (eXtra implanted junction FET). This technique yields a reference with low supply current, good thermal hysteresis, and exceptionally low noise. The core of the XFET reference consists of two junction field-effect transistors (JFETs), one of which has an extra channel implant to raise its pinch-off voltage. By running the two JFETs at the same drain current, the difference in pinch-off voltage can be amplified and used to form a highly stable voltage reference. The intrinsic reference voltage is around 0.5 V with a negative temperature coefficient of about −120 ppm/°C. This slope is essentially constant to the dielectric constant of silicon and can be compensated closely by adding a correction term generated in the same fashion as the proportional-to-temperature (PTAT) term used to compensate band gap references. The primary advantage of an XFET reference is its correction term, which is ~30 times lower and requires less correction than that of a band gap reference. Because most of the noise of a band gap reference comes from the temperature compensation circuitry, the XFET results in much lower noise. Figure 29 shows the basic topology of the ADR43x series. The temperature correction term is provided by a current source with a value designed to be proportional to absolute temperature. The general equation is VOUT = G (ΔVP – R1 × IPTAT) (1) where: G is the gain of the reciprocal of the divider ratio. ΔVP is the difference in pinch-off voltage between the two JFETs. IPTAT is the positive temperature coefficient correction current. ADR43x devices are created by on-chip adjustment of R2 and R3 to achieve 2.048 V or 2.500 V, respectively, at the reference output. ** IPTAT I1 I1 *EXTRA CHANNEL IMPLANT VOUT = G(∆VP – R1 × IPTAT) R2 VIN VOUT GND R3 R1 ∆VP ADR43x Figure 29. Simplified Schematic Device Power Dissipation Considerations The ADR43x family of references is guaranteed to deliver load currents to 10 mA with an input voltage that ranges from 4.1 V to 18 V. When these devices are used in applications at higher currents, use the following equation to account for the temperature effects due to the power dissipation increases: TJ = PD × θJA + TA (2) where: TJ and TA are the junction and ambient temperatures, respectively. PD is the device power dissipation. θJA is the device package thermal resistance. BASIC VOLTAGE REFERENCE CONNECTIONS Voltage references, in general, require a bypass capacitor connected from VOUT to GND. The circuit in Figure 30 illustrates the basic configuration for the ADR43x family of references. Other than a 0.1 μF capacitor at the output to help improve noise suppression, a large output capacitor at the output is not required for circuit stability. + NOTES: 1. NC = NO CONNECT 2. TP = TEST PIN (DO NOT CONNECT) 1 2 3 45 8 6 7 ADR43x TOP VIEW (Not to Scale) TP COMP VOUT TRIM TP NC GND VIN 10µF 0.1µF 0.1µF Figure 30. Basic Voltage Reference Configuration NOISE PERFORMANCE The noise generated by the ADR43x family of references is typically less than 3.75 μV p-p over the 0.1 Hz to 10.0 Hz band for ADR430, ADR431, and ADR433. Figure 22 shows the 0.1 Hz to 10.0 Hz noise of the ADR431, which is only 3.5 μV p-p. The noise measurement is made with a band-pass filter made of a 2-pole high-pass filter with a corner frequency at 0.1 Hz and a 2-pole low-pass filter with a corner frequency at 10.0 Hz. HIGH FREQUENCY NOISE The total noise generated by the ADR43x family of references is composed of the reference noise and the op amp noise. Figure 31 shows the wideband noise from 10 Hz to 25 kHz. An internal node of the op amp is brought out on Pin 7, and by overcompensating the op amp, the overall noise can be reduced. This is understood by considering that in a closed-loop configuration, the effective output impedance of an op amp is β + = VO O O A r R 1 (3) where: RO is the apparent output impedance. rO is the output resistance of the op amp. AVO is the open-loop gain at the frequency of interest. β is the feedback factor. |
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