NTMFS4925NET1G datasheet(1/7 Pages) ONSEMI

部件名	NTMFS4925NET1G

功能描述	Power MOSFET 30 V, 48 A, Single N?묬hannel, SO?? FL

PDF	7 Pages

Scroll/Zoom	100%

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

1 / 7 page

September, 2011 − Rev. 0

1

Publication Order Number:

NTMFS4925NE/D

NTMFS4925NE

Power MOSFET

30 V, 48 A, Single N−Channel, SO−8 FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Dual Sided Cooling Capability

• Optimized for 5 V, 12 V Gate Drives

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• CPU Power Delivery

• DC−DC Converters

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1)

Steady

State

TA = 25°C

ID

16.7

A

TA = 100°C

10.5

Power Dissipation

RqJA (Note 1)

TA = 25°C

PD

2.70

W

Continuous Drain

Current RqJA ≤ 10 s

(Note 1)

TA = 25°C

ID

25.2

A

TA = 100°C

15.9

Power Dissipation

RqJA ≤ 10 s (Note 1)

TA = 25°C

PD

6.16

W

Continuous Drain

Current RqJA

(Note 2)

TA = 25°C

ID

9.7

A

TA = 100°C

6.2

Power Dissipation

RqJA (Note 2)

TA = 25°C

PD

0.92

W

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

ID

48

A

TC =100°C

30

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

23.2

W

Pulsed Drain

Current

TA = 25°C, tp = 10 ms

IDM

195

A

Current Limited by Package

TA = 25°C

IDmax

100

A

Operating Junction and Storage

Temperature

TJ,

TSTG

−55 to

+150

°C

Source Current (Body Diode)

IS

21

A

Drain to Source DV/DT

dV/dt

6.0

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,

IL = 26 Apk, L = 0.1 mH, RG = 25 W)

EAS

34

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

4925NE

AYWWG

G

1

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

6.0 mW @ 10 V

48 A

10 mW @ 4.5 V

N−CHANNEL MOSFET

Device

Package

Shipping†

ORDERING INFORMATION

NTMFS4925NET1G

SO−8 FL

(Pb−Free)

1500 /

Tape & Reel

NTMFS4925NET3G

SO−8 FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

G

D

G (4)

S (1,2,3)

D (5,6)

类似零件编号 - NTMFS4925NET1G

制造商	部件名	数据表	功能描述
ON Semiconductor	NTMFS4925NET1G	148Kb / 7P	Power MOSFET September, 2011 ??Rev. 0

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NTMFS4925NET1G 数据表(PDF) 1 Page - ON Semiconductor

NTMFS4925NET1G 数据表(HTML) 1 Page - ON Semiconductor

类似零件编号 - NTMFS4925NET1G

类似说明 - NTMFS4925NET1G

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NTMFS4925NET1G 数据表(PDF) 1 Page - ON Semiconductor

NTMFS4925NET1G 数据表(HTML) 1 Page - ON Semiconductor

类似零件编号 - NTMFS4925NET1G

类似说明 - NTMFS4925NET1G

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