NTMFS4925NET1G datasheet(3/7 Pages) ONSEMI

部件名	NTMFS4925NET1G

功能描述	Power MOSFET 30 V, 48 A, Single N?묬hannel, SO?? FL

PDF	7 Pages

Scroll/Zoom	100%

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

3 / 7 page

NTMFS4925NE

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

7.4

Rise Time

27.5

Turn−Off Delay Time

td(OFF)

20.3

Fall Time

4.1

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

0.86

1.1

TJ = 125°C

0.75

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

25.8

Charge Time

12.4

Discharge Time

13.4

Reverse Recovery Charge

QRR

13.6

PACKAGE PARASITIC VALUES

Source Inductance

TA = 25°C

1.00

Drain Inductance

0.005

Gate Inductance

1.84

Gate Resistance

0.8

2.2

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

NTMFS4925NET1G 数据表(PDF) 3 Page - ON Semiconductor

NTMFS4925NET1G 数据表(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

数据表下载