GND

S/D

1

2

3

4

8

7

6

5

GND

N/C

GND

LP3891

SNVS235D – SEPTEMBER 2003 – REVISED APRIL 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

CONNECTION DIAGRAM

Figure 1. TO-220, Top View

Figure 2. DDPAK/TO-263, Top View

Figure 3. SO PowerPAD-8, Top View

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BLOCK DIAGRAM

2

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