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STGW60V60DF 数据表(PDF) 2 Page - STMicroelectronics |
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STGW60V60DF 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 16 page ![]() Electrical ratings STGW60V60DF, STGWT60V60DF 2/16 DocID024154 Rev 6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 600 V I C Continuous collector current at T C = 25 °C 80 (1) 1. Current level is limited by bond wires A I C Continuous collector current at T C = 100 °C 60 A I CP (2) 2. Pulse width limited by maximum junction temperature. Pulsed collector current 240 A V GE Gate-emitter voltage ±20 V I F Continuous forward current at T C = 25 °C 80 (1) A I F Continuous forward current at T C = 100 °C 60 A I FP (2) Pulsed forward current 240 A P TOT Total dissipation at T C = 25 °C 375 W T STG Storage temperature range - 55 to 150 °C T J Operating junction temperature - 55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit R thJC Thermal resistance junction-case IGBT 0.4 °C/W R thJC Thermal resistance junction-case diode 1.14 °C/W R thJA Thermal resistance junction-ambient 50 °C/W |
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