STGW60V60DF datasheet(5/16 Pages) STMICROELECTRONICS

部件名	STGW60V60DF

功能描述	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

5 / 16 page

DocID024154 Rev 6

5/16

STGW60V60DF, STGWT60V60DF

Electrical characteristics

2.1

Electrical characteristics (curves)

Figure 2. Power dissipation vs. case

temperature

Figure 3. Collector current vs. temperature case

Figure 4. Output characteristics @ 25 °C

Figure 5. Output characteristics @ 175 °C

Figure 6. VCE(SAT) vs. junction temperature

Figure 7. VCE(SAT) vs. collector current

AM17139v1

100

150

200

250

300

350

100 125 150 175

Ptot (W)

TC (°C)

AM17140v1

025

100 125 150 175

IC (A)

TC (°C)

VGE > 15 V, TJ < 175 °C

AM17141v1

100

150

200

01234

Ic (A)

VCE(V)

9 V

11 V

13 V

VGE=15 V

7 V

TJ =25 °C

AM17142v1

100

150

200

01234

IC(A)

VCE (V)

VGE=15 V

J =17 5 °C

9 V

11 V

7 V

13 V

AM17143v1

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

-50 -25

75 100 125 150 175

VCE(sat)

(V)

TJ (ºC)

C = 120 A

C = 60 A

C = 30 A

GE =15 V

AM17144v1

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

10 20 30 40 50 60 70 80 90 100 110 120

VCE(sat)

(V)

IC(A)

TJ = - 40 °C

TJ = 25 °C

J = 175 °C

GE = 15 V

STGW60V60DF 数据表(PDF) 5 Page - STMicroelectronics

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