STGP20H60DF datasheet(9/22 Pages) STMICROELECTRONICS

9 / 22 page

DocID023740 Rev 4

9/22

STGB20H60DF, STGF20H60DF, STGP20H60DF

Electrical characteristics

Figure 12. VCE(sat) vs. junction temperature

Figure 13. VCE(sat) vs. collector current

Figure 14. Forward bias safe operating area for

D2PAK and TO-220

Figure 15. Thermal impedance for D2PAK and

TO-220

Figure 16. Forward bias safe operating area for

TO-220FP

Figure 17. Thermal impedance for TO-220FP

VCE(sat)

1.9

1.7

1.5

1.3

-75

TJ(°C)

125

(V)

-25

2.1

2.3

IC= 40 A

VGE= 15 V

IC= 20 A

IC= 10 A

AM16290V1

VCE(sat)

2.2

1.8

1.4

1.0

020

IC(A)

(V)

VGE= 15 V

TJ = 175 °C

TJ = -40 °C

TJ = 25 °C

AM16291V1

(single pulse TC=25°C,

TJ<=175°C; VGE=15V)

0.1

100

VCE(V)

(A)

1 ms

100 µs

AM16280V1

-5

-4

-3

-2

-1

tp(s)

-2

-1

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-c

δ=tp/τ

Single pulse

δ=0.5

ZthTO2T_B

0.1

100

VCE(V)

(A)

1 ms

100 µs

1 µs

(single pulse TC=25°C,

TJ<=175°C; VGE=15V)

AM16283V1

Zth=k Rthj-c

δ=tp/τ

-5

-4

-3

-2

-1

tp(s)

-3

-1

0.2

0.05

0.02

0.01

0.1

Single pulse

δ=0.5

ZthTOF2T_B

-2

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