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STGP20H60DF 数据表(PDF) 3 Page - STMicroelectronics |
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STGP20H60DF 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 22 page ![]() DocID023740 Rev 4 3/22 STGB20H60DF, STGF20H60DF, STGP20H60DF Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter TO-220 D²PAK TO-220FP Unit V CES Collector-emitter voltage (V GE = 0) 600 V I C Continuous collector current at T C = 25 °C 40 40 (1) 1. Limited by maximum junction temperature. A Continuous collector current at T C = 100 °C 20 20 (1) A I CP (2) 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Pulsed collector current 80 80 (1) A V GE Gate-emitter voltage ±20 V I F Continuous forward current T C = 25 °C 40 40 (1) A Continuous forward current at T C = 100 °C 20 20 (1) I FP (2) Pulsed forward current 80 80 (1) A P TOT Total dissipation at T C = 25 °C 167 37 W T STG Storage temperature range - 55 to 150 °C T J Operating junction temperature - 55 to 175 Table 3. Thermal data Symbol Parameter TO-220 D²PAK TO-220FP Unit R thJC Thermal resistance junction-case IGBT 0.9 4 °C/W R thJC Thermal resistance junction-case diode 2.5 5.6 °C/W R thJA Thermal resistance junction-ambient 62.5 °C/W |
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