MRF6V4300NR1 MRF6V4300NBR1

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed primarily for CW large--signal output and driver applications with

frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

industrial, medical and scientific applications.

f = 450 MHz

Power Gain — 22 dB

Drain Efficiency — 60%

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +110

Vdc

Gate--Source Voltage

--6.0, +10

Vdc

Storage Temperature Range

-- 65 to +150

°C

Case Operating Temperature

150

°C

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

Document Number: MRF6V4300N

Rev. 3, 4/2010

Freescale Semiconductor

Technical Data

MRF6V4300NR1

MRF6V4300NBR1

CASE 1484--04, STYLE 1

TO--272 WB--4

PLASTIC

MRF6V4300NBR1

CASE 1486--03, STYLE 1

TO--270 WB--4

PLASTIC

MRF6V4300NR1

10--600 MHz, 300 W, 50 V

LATERAL N--CHANNEL

SINGLE--ENDED

BROADBAND

RF POWER MOSFETs

PARTS ARE SINGLE--ENDED

(Top View)

Figure 1. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistor.

© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.