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RF Device Data

Freescale Semiconductor

MRF6V4300NR1 MRF6V4300NBR1

PRODUCT DOCUMENTATION AND SOFTWARE

Refer to the following documents to aid your design process.

Application Notes

• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages

• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

• Electromigration MTTF Calculator

• RF High Power Model

For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &

Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

0

July 2008

• Initial Release of Data Sheet

1

Oct. 2008

• Added Fig. 13, MTTF versus Junction Temperature, p. 6

2

Mar. 2009

Equivalent Source and Load Impedance data table and replotted data, p. 7

3

Apr. 2010

• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related

“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C

in Capable Plastic Package bullet, p. 1

• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,

p. 14