1

Motorola TMOS Power MOSFET Transistor Device Data

Advance Information

Medium Power Surface Mount Products

TMOS Single P-Channel

Field Effect Transistor

Micro8

™ devices are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density HDTMOS process to

achieve lowest possible on–resistance per silicon area. They are

capable of withstanding high energy in the avalanche and commuta-

tion modes and the drain–to–source diode has a very low reverse

recovery time. Micro8

™ devices are designed for use in low voltage,

high speed switching applications where power efficiency is important.

Typical applications are dc–dc converters, and power management in

portable and battery powered products such as computers, printers,

cellular and cordless phones. They can also be used for low voltage

motor controls in mass storage products such as disk drives and tape

drives. The avalanche energy is specified to eliminate the guesswork

in designs where inductive loads are switched and offer additional

safety margin against unexpected voltage transients.

• Miniature Micro8 Surface Mount Package — Saves Board Space

• Extremely Low Profile (<1.1mm) for thin applications such as

PCMCIA cards

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

• Mounting Information for Micro8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

20

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

20

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 8.0

Vdc

Drain Current — Continuous @ TA = 25°C (2)

ID

ID

IDM

1.8

1.6

14.4

Adc

Apk

Total Power Dissipation @ TA = 25°C (1)

Linear Derating Factor (1)

PD

1.8

14.3

Watts

mW/

°C

Total Power Dissipation @ TA = 25°C (2)

Linear Derating Factor (2)

PD

0.78

6.25

Watts

mW/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

THERMAL RESISTANCE

Rating

Symbol

Typ.

Max.

Unit

Thermal Resistance — Junction to Ambient, PCB Mount (1)

R

θJA

R

θJA

55

125

70

160

°C/W

* Negative signs for P–Channel device omitted for clarity.

(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ Steady State)

(2) When mounted on minimum recommended FR–4 or G–10 board (VGS = 4.5 V, @ Steady State)

(3) Repetitive rating; pulse width limited by maximum junction temperature.

DEVICE MARKING

ORDERING INFORMATION

AB

Device

Reel Size

Tape Width

Quantity

AB

MTSF1P02HDR2

13

″

12 mm embossed tape

4000 units

This document contains information on a new product. Specifications and information are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International

Rectifier. Thermal Clad is a trademark of the Berquist Company.

REV 1

Order this document

by MTSF1P02HD/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

D

S

G

MTSF1P02HD

SINGLE TMOS

POWER FET

1.8 AMPERES

20 VOLTS

RDS(on) = 0.16 OHM

Motorola Preferred Device

™

Source

1

2

3

4

8

7

6

5

Top View

Source

Source

Gate

Drain

Drain

Drain

Drain

CASE 846A–02, Style 1

Micro8