MTSF1P02HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

1.2

1.6

0.4

2

0.8

0

0.4

0.8

2

0

1.2

1.6

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

0.4

0.8

1.2

1.6

2

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0

2

4

0

0.5

1

1.5

2

0.1

0.16

0.18

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0

2.0

1

100

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

TJ = 25°C

VDS ≥ 10 V

TJ = 100°C

25

°C

– 55

°C

TJ = 25°C

VGS = 0 V

VGS = 4.5 V

ID = 1.8 A

TJ = 25°C

4.5 V

VGS = 2.7 V

ID = 1.8 A

1.2

2.7 V

2 V

1.8 V

1.6 V

0.4

1.6

6

8

2.7 V

– 50

– 25

0

25

50

75

100

125

150

TJ = 125°C

2

0.14

0.5

0.8

1.0

1.5

0

4

8

12

20

1.7 V

0.6

0.5

0.4

0.3

0.2

0.1

0

0.12

10

100

°C

1.9 V

1.5 V

1.4 V

25

°C

16