MTSF2P02HD

7

Motorola TMOS Power MOSFET Transistor Device Data

t, TIME

Figure 13. Reverse Recovery Time (trr)

di/dt = 300 A/

µs

Standard Cell Density

High Cell Density

tb

trr

ta

trr

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curve (Figure

14) defines the maximum simultaneous drain–to–source vol-

tage and drain current that a transistor can handle safely

when it is forward biased. Curves are based upon maximum

peak junction temperature and a case temperature (TC) of

25

°C. Peak repetitive pulsed power limits are determined by

using the thermal response data in conjunction with the pro-

cedures discussed in AN569, “Transient Thermal Resistance

– General Data and Its Use.”

Switching between the off–state and the on–state may tra-

verse any load line provided neither rated peak current (IDM)

nor rated voltage (VDSS) is exceeded, and that the transition

time (tr, tf) does not exceed 10 µs. In addition the total power

averaged over a complete switching cycle must not exceed

(TJ(MAX) – TC)/(R

θJC).

Figure 14. Maximum Rated Forward Biased

Safe Operating Area

0.1

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

1

10

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.01

VGS = 8 V

SINGLE PULSE

TC = 25°C

10

0.1

dc

10 ms

1

100

100

1 ms

100

µs