MTSF2P02HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Negative sign for P–Channel devices omitted for clarity

Rating

Symbol

Max

Unit

Drain–to–Source Voltage

VDSS

20

V

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

20

V

Gate–to–Source Voltage — Continuous

VGS

± 8.0

V

1 inch SQ.

FR–4 or G–10 PCB

Figure 1 below

Steady State

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (1)

RTHJA

PD

ID

ID

IDM

70

1.79

14.29

4.5

3.6

36

°C/W

Watts

mW/

°C

A

A

A

Minimum

FR–4 or G–10 PCB

Figure 2 below

Steady State

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (1)

RTHJA

PD

ID

ID

IDM

160

0.78

6.25

3.0

2.4

24

°C/W

Watts

mW/

°C

A

A

A

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

(1) Repetitive rating; pulse width limited by maximum junction temperature.

Figure 1. 1.0 Inch Square FR–4 or G–10 PCB

Figure 2. Minimum FR–4 or G–10 PCB