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MTSF2P03HD 数据表(PDF) 1 Page - Motorola, Inc

部件名 MTSF2P03HD
功能描述  SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM
PDF  12 Pages
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制造商  MOTOROLA [Motorola, Inc]
网页  http://www.freescale.com
标志 MOTOROLA - Motorola, Inc

MTSF2P03HD 数据表(HTML) 1 Page - Motorola, Inc

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Motorola TMOS Power MOSFET Transistor Device Data
Designer's™ Data Sheet
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistor
Micro8
™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8
™ devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
• Miniature Micro8 Surface Mount Package — Saves Board Space
• Extremely Low Profile (<1.1 mm) for thin applications such as
PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
DEVICE MARKING
ORDERING INFORMATION
AE
Device
Reel Size
Tape Width
Quantity
AE
MTSF2P03HDR2
13
12 mm embossed tape
4000 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MTSF2P03HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
© Motorola, Inc. 1997
D
S
G
MTSF2P03HD
SINGLE TMOS
POWER MOSFET
2.7 AMPERES
30 VOLTS
RDS(on) = 0.090 OHM
Motorola Preferred Device
Source
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
CASE 846A–02, Style 1
Micro8
REV 3


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类似说明 - MTSF2P03HD

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Motorola, Inc
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SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
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SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM
MTY30N50E MOTOROLA-MTY30N50E Datasheet
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TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
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