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MTSF2P03HD 数据表(PDF) 1 Page - Motorola, Inc |
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MTSF2P03HD 数据表(HTML) 1 Page - Motorola, Inc |
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1 / 12 page ![]() 1 Motorola TMOS Power MOSFET Transistor Device Data Designer's™ Data Sheet Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8 ™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commuta- tion modes and the drain–to–source diode has a very low reverse recovery time. Micro8 ™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Miniature Micro8 Surface Mount Package — Saves Board Space • Extremely Low Profile (<1.1 mm) for thin applications such as PCMCIA cards • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for Micro8 Package Provided DEVICE MARKING ORDERING INFORMATION AE Device Reel Size Tape Width Quantity AE MTSF2P03HDR2 13 ″ 12 mm embossed tape 4000 units Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International Rectifier. Thermal Clad is a trademark of the Bergquist Company. Order this document by MTSF2P03HD/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1997 D S G MTSF2P03HD SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM Motorola Preferred Device ™ Source 1 2 3 4 8 7 6 5 Top View Source Source Gate Drain Drain Drain Drain CASE 846A–02, Style 1 Micro8 REV 3 |
类似零件编号 - MTSF2P03HD |
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类似说明 - MTSF2P03HD |
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