MTSF2P03HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Negative sign for P–Channel devices omitted for clarity

Rating

Symbol

Max

Unit

Drain–to–Source Voltage

VDSS

30

V

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

30

V

Gate–to–Source Voltage — Continuous

VGS

± 20

V

1 inch SQ.

FR–4 or G–10 PCB

Figure 1 below

Steady State

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (1)

RTHJA

PD

ID

ID

IDM

70

1.79

14.29

4.1

3.2

32

°C/W

Watts

mW/

°C

A

A

A

Minimum

FR–4 or G–10 PCB

Figure 2 below

Steady State

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (1)

RTHJA

PD

ID

ID

IDM

160

0.78

6.25

2.7

2.1

21

°C/W

Watts

mW/

°C

A

A

A

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 159 mH, RG = 25 W)

EAS

715

mJ

(1) Repetitive rating; pulse width limited by maximum junction temperature.

Figure 1. 1.0 Inch Square FR–4 or G–10 PCB

Figure 2. Minimum FR–4 or G–10 PCB