Characteristics

STPS30SM100S

2/11

Doc ID 15517 Rev 4

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values with terminals 1 and 3 short circuited)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

Forward current rms

60

A

Average forward current

δ = 0.5

TO-220AB, TO-220AB narrow leads,

30

A

Surge non repetitive forward current

terminals 1 and 3 short circuited

530

A

(1)

Repetitive peak avalanche power

21500

W

(2)

Maximum repetitive peak avalanche

voltage

120

V

(2)

Maximum single pulse peak

avalanche voltage

120

V

Storage temperature range

-65 to + 175

°C

150

°C

1.

For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche

energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.

Refer to Figure 13.

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

<

1

Rth(j-a)

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

TO-220AB, TO-220AB narrow leads,

1

°C/W

TO-220FPAB

4

Table 4.

Static electrical characteristics (terminals 1 and 3 short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

45

µA

15

45

mA

(2)

Forward voltage drop

500

mV

420

600

670

505

560

780

870

630

690

1.

2.