STPS30SM100S datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STPS30SM100S

4/11

Doc ID 15517 Rev 4

Figure 8.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 9.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

δ=tp/T

Zth(j-c)/Rth(j-c)

tp(s)

TO-220AB, TO-220AB narrow leads, I2PAK, D2PAK

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

δ=tp/T

TO-220FPAB

Zth(j-c)/Rth(j-c)

tp(s)

Figure 10.

Reverse leakage current versus

reverse voltage applied (typical

values)

Figure 11.

Junction capacitance versus

reverse voltage applied

(typical values)

Figure 12.

Forward voltage drop versus

forward current (terminals 1 and 3

short circuited)

Figure 13.

Reverse safe operating area

(tp < 1 µs and Tj < 150 °C)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1020

40506070

8090

100

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

IR(mA)

VR(V)

100

1000

10000

100

F=1MHz

VOSC=30mVRMS

Tj=25°C

VR(V)

C(pF)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

(V)

IFM(A)

Iarm (A)

100

110

120

130

140

150

Forbidden area

Varm (V)

Operating area

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