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NB669 数据表(PDF) 13 Page - Monolithic Power Systems |
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NB669 数据表(HTML) 13 Page - Monolithic Power Systems |
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13 / 19 page ![]() NB669, 24V, HIGH CURRENT SYNCHRONOUS BUCK CONVERTER WITH LDO NB669 Rev. 1.01 www.MonolithicPower.com 13 7/23/2013 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. CLK 5V 12V/100mA 100nF 100nF 100nF 100nF 100nF PGND PGND PGND Figure 7—Charge Pump Circuit Power Good (PG) The NB669 has power-good (PG) output used to indicate whether the output voltage of the Buck regulator is ready or not. The PG pin is the open drain of a MOSFET. It should be connected to VCC or other voltage source through a resistor (e.g. 100k). After the input voltage is applied, the MOSFET is turned on so that the PG pin is pulled to GND before SS is ready. After FB voltage reaches 95% of REF voltage, the PG pin is pulled high after a delay. The PG delay time is 0.5ms. When the FB voltage drops to 85% of REF voltage, the PG pin will be pulled low. Over Current Protection NB669 has cycle-by-cycle over current limiting control. The current-limit circuit employs a "valley" current-sensing algorithm. The part uses the Rds(on) of the low side MOSFET as a current-sensing element. If the magnitude of the current-sense signal is above the current-limit threshold, the PWM is not allowed to initiate a new cycle. The trip level is fixed internally. The inductor current is monitored by the voltage between GND pin and SW pin. GND is used as the positive current sensing node so that GND should be connected to the source terminal of the bottom MOSFET. Since the comparison is done during the high side MOSFET OFF and low side MOSFET ON state, the OC trip level sets the valley level of the inductor current. Thus, the load current at over- current threshold, IOC, can be calculated as follows: Δ =+ inductor OC I I I _ limit 2 (6) In an over-current condition, the current to the load exceeds the current to the output capacitor; thus the output voltage tends to fall off. Eventually, it will end up with crossing the under voltage protection threshold and shutdown. Over/Under-Voltage Protection (OVP/UVP) NB669 monitors output voltage to detect over and under voltage. When the feedback voltage becomes higher than 115% of the target voltage, the controller will enter Dynamic Regulation Period. During this period, the LS will off when the LS current goes to -1A, this will then discharge the output and try to keep it within the normal range. If the dynamic regulation can not limit the increasing of the Vo, once the feedback voltage becomes higher than 130% of the feedback voltage, the OVP comparator output goes high and the circuit latches as the high-side MOSFET driver OFF and the low-side MOSFET driver turn on acting as an -1A current source. When the feedback voltage becomes lower than 60% of the target voltage, the UVP comparator output goes high if the UV still occurs after 26us delay; then the fault latch will be triggered--- latches HS off and LS on; the LS FET keeps on until the inductor current goes zero. UVLO Protection The NB669 has under-voltage lock-out protection (UVLO). When the VCC voltage is higher than the UVLO rising threshold voltage, the part will be powered up. It shuts off when the VIN voltage is lower than the UVLO falling threshold voltage. This is non-latch protection. The part is disabled when the VCC voltage falls below 4.65V. If an application requires a higher under-voltage lockout (UVLO), use the EN pin as shown in Figure 8 to adjust the input voltage UVLO by using two external resistors. It is recommended to use the enable resistors to set the UVLO falling threshold (VSTOP) above 4.65V. The rising threshold (VSTART) should be set to provide enough hysteresis to allow for any input supply variations. |
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