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AM29F010 数据表(PDF) 19 Page - Advanced Micro Devices |
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AM29F010 数据表(HTML) 19 Page - Advanced Micro Devices |
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19 / 31 page ![]() Am29F010 19 DC CHARACTERISTICS (continued) CMOS Compatible Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. ICC active while Embedded Program or Embedded Erase Algorithm is in progress. 3. Not 100% tested. Parameter Symbol Parameter Description Test Description Min Max Unit ILI Input Load Current VIN = VSS to VCC, VCC = VCC Max ±1.0 µA ILIT A9 Input Load Current VCC = VCC Max, A9 = 12.5 V 50 µA ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max ±1.0 µA ICC1 VCC Active Current (Note 1) CE# = VIL, OE# = VIH, VCC = VCC Max 30 mA ICC2 VCC Active Current (Notes 2, 3) CE# = VIL, OE# = VIH, VCC = VCC Max 50 mA ICC3 VCC Standby Current VCC = VCC Max, CE# = VCC ± 0.5 V, OE# = VIH 100 µA VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 0.7 x VCC VCC + 0.5 V VID Voltage for Autoselect and Temporary Sector Unprotect VCC = 5.0 V 11.5 12.5 V VOL Output Low Voltage IOL = 12 mA, VCC = VCC Min 0.45 V VOH1 Output High Voltage IOH = –2.5 mA, VCC = VCC Min 0.85 VCC V VOH2 IOH = –100 µA, VCC = VCC Min VCC –0.4 V VLKO Low VCC Lock-out Voltage 3.2 4.2 V |
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