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AM29F040B 数据表(PDF) 24 Page - Advanced Micro Devices

部件名 AM29F040B
功能描述  4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
PDF  30 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29F040B 数据表(HTML) 24 Page - Advanced Micro Devices

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Am29F040B
P R E L I M I NARY
AC CHARACTERISTICS
AC CHARACTERISTICS
Erase and Program Operations
Alternate CE# Controlled Writes
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
Note: Both DQ6 and DQ2 toggle with OE# or CE#. See the text on DQ6 and DQ2 in the “Write Operation Status” section for more
information.
21445B-18
Figure 13.
DQ2 vs. DQ6
Enter
Erase
Erase
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
WE#
DQ6
DQ2
DQ2 and DQ6 toggle with OE# and CE#
Erase
Complete
Erase
Suspend
Suspend
Program
Resume
Embedded
Erasing
Parameter Symbols
Description
Speed Options
Unit
JEDEC
Standard
-55
-70
-90
-120
-150
tAVAV
tWC
Write Cycle Time (Note 1)
Min
55
70
90
120
150
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
40
45
45
50
50
ns
tDVEH
tDS
Data Setup Time
Min
25
30
45
50
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
0
ns
tWLEL
tWS
CE# Setup Time
Min
0
ns
tEHWH
tWH
CE# Hold Time
Min
0
ns
tELEH
tCP
Write Pulse Width
Min
30
35
45
50
50
ns
tEHEL
tCPH
Write Pulse Width High
Min
20
20
20
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
(Note 2)
Typ
7
µs
tWHWH2
tWHWH2
Sector Erase Operation
(Note 2)
Typ
1
sec



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