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AM29F040B 数据表(PDF) 24 Page - Advanced Micro Devices |
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AM29F040B 数据表(HTML) 24 Page - Advanced Micro Devices |
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24 / 30 page ![]() 24 Am29F040B P R E L I M I NARY AC CHARACTERISTICS AC CHARACTERISTICS Erase and Program Operations Alternate CE# Controlled Writes Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. Note: Both DQ6 and DQ2 toggle with OE# or CE#. See the text on DQ6 and DQ2 in the “Write Operation Status” section for more information. 21445B-18 Figure 13. DQ2 vs. DQ6 Enter Erase Erase Erase Enter Erase Suspend Program Erase Suspend Read Erase Suspend Read Erase WE# DQ6 DQ2 DQ2 and DQ6 toggle with OE# and CE# Erase Complete Erase Suspend Suspend Program Resume Embedded Erasing Parameter Symbols Description Speed Options Unit JEDEC Standard -55 -70 -90 -120 -150 tAVAV tWC Write Cycle Time (Note 1) Min 55 70 90 120 150 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 40 45 45 50 50 ns tDVEH tDS Data Setup Time Min 25 30 45 50 50 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 ns tWLEL tWS CE# Setup Time Min 0 ns tEHWH tWH CE# Hold Time Min 0 ns tELEH tCP Write Pulse Width Min 30 35 45 50 50 ns tEHEL tCPH Write Pulse Width High Min 20 20 20 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec |
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