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AM29F040B 数据表(PDF) 25 Page - Advanced Micro Devices |
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AM29F040B 数据表(HTML) 25 Page - Advanced Micro Devices |
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25 / 30 page ![]() Am29F040B 25 P R E L I M I NARY AC CHARACTERISTICS ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 5.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 4.5 V (4.75 V for -55), 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set DQ5 = 1. See the section on DQ5 for further information. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for further information on command definitions. 6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles. Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 1 8 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 8 64 sec Byte Programming Time 7 300 µs Excludes system-level overhead (Note 5) Chip Programming Time (Note 3) 3.6 10.8 sec tGHEL tWS OE# CE# WE# tDS Data tAH Addresses tDH tCP DQ7# DOUT tWC tAS tCPH PA Data# Polling A0 for program 55 for erase tRH tWHWH1 or 2 tWH PD for program 30 for sector erase 10 for chip erase 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase tBUSY Notes: 1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data. 2. Figure indicates the last two bus cycles of the command sequence. 21445B-19 Figure 14. Alternate CE# Controlled Write Operation Timings |
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