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AM29LL800B 数据表(PDF) 40 Page - Advanced Micro Devices |
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AM29LL800B 数据表(HTML) 40 Page - Advanced Micro Devices |
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40 / 40 page ![]() 40 Am29LL800B ADV ANCE I N FO RMAT I O N REVISION SUMMARY FOR AM29LL800B Revision A+1 Distinctive Characteristics Ultra low power consumption bullet: The typical Auto- matic Sleep Mode and standby mode currents are both 75 nA. DC Characteristics, CMOS Compatible The typical current for ICC3, ICC4, and ICC5 is 75 nA. Revision A+2 Reset Command Deleted last paragraph in section, which applied to RE- SET#, not the reset command. Revision A+3 Figure 2, In-System Sector Protect/Unprotect Algorithms In the sector protect algorithm, added a “PLSCNT=1” box in the path from “Protect another sector?” back to setting up the next sector address. DC Characteristics Changed Note 1 to indicate that OE# is at VIH for the listed current. Erase and Program Operations; Alternate CE# Controlled Erase/Program Operations Corrected the notes reference for tWHWH1 and tWHWH2. These parameters are 100% tested. Corrected the note reference for tVCS. This parameter is not 100% tested. Removed tOEH parameters from CE# Con- trolled Erase/Program Operations table for consistency with other data sheets. Temporary Sector Unprotect Table Added note reference for tVIDR. This parameter is not 100% tested. Figure 23, Temporary Sector Unprotect Timing Diagram Changed the high voltage (VID) on the RESET# wave- form to 10 V. Figure 24, Sector Protect/Unprotect Timing Diagram A valid address is not required for the first write cycle; only the data 60h. Erase and Programming Performance In Note 2, the worst case endurance is now 1 million cy- cles. Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. |
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