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BC847BMB 数据表(PDF) 3 Page - NXP Semiconductors

部件名 BC847BMB
功能描述  45 V, 100 mA NPN general-purpose transistors
PDF  14 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

BC847BMB 数据表(HTML) 3 Page - NXP Semiconductors

  BC847BMB Datasheet HTML 1Page - NXP Semiconductors BC847BMB Datasheet HTML 2Page - NXP Semiconductors BC847BMB Datasheet HTML 3Page - NXP Semiconductors BC847BMB Datasheet HTML 4Page - NXP Semiconductors BC847BMB Datasheet HTML 5Page - NXP Semiconductors BC847BMB Datasheet HTML 6Page - NXP Semiconductors BC847BMB Datasheet HTML 7Page - NXP Semiconductors BC847BMB Datasheet HTML 8Page - NXP Semiconductors BC847BMB Datasheet HTML 9Page - NXP Semiconductors Next Button
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BC847XMB_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 5 March 2012
3 of 14
NXP Semiconductors
BC847xMB series
45 V, 100 mA NPN general-purpose transistors
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Reflow soldering is the only recommended soldering method.
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
45
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
100
mA
ICM
peak collector current
single pulse;
tp  1ms
-200
mA
IBM
peak base current
single pulse;
tp  1ms
-100
mA
Ptot
total power dissipation
Tamb  25 C
[1][2] -250
mW
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
+150
C
Tstg
storage temperature
65
+150
C



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