BC847BMB datasheet(5/14 Pages) NXP

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BC847XMB_SER

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Product data sheet

Rev. 1 — 5 March 2012

5 of 14

NXP Semiconductors

BC847xMB series

45 V, 100 mA NPN general-purpose transistors

Characteristics

[1]

Pulse test: tp  300 s;  0.02.

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base

cut-off current

VCB =30V; IE =0A

VCB =30V; IE =0A;

Tj = 150 C

A

IEBO

emitter-base

cut-off current

VEB =5V; IC = 0 A

100

hFE

DC current gain

VCE =5V; IC =2mA

BC847AMB

110

220

BC847BMB

200

450

BC847CMB

420

800

VCEsat

collector-emitter

saturation voltage

IC =10mA; IB = 0.5 mA

200

IC = 100 mA; IB =5mA

[1] -

200

400

VBEsat

base-emitter

saturation voltage

IC =10mA; IB =0.5 mA

700

IC = 100 mA; IB =5mA

[1] -900

VBE

base-emitter voltage

IC =2mA; VCE = 5 V

580

660

700

IC =10mA; VCE = 5 V

770

transition frequency

VCE =5V; IC =10 mA;

f = 100 MHz

100

MHz

collector capacitance VCB =10V; IE =ie =0A;

f= 1MHz

1.5

emitter capacitance

VEB =0.5 V; IC =ic =0A;

f= 1MHz

-11

noise figure

IC = 200 A; VCE =5V;

RS =2k; f = 1 kHz;

B=200 Hz

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