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AM28F010A-90ECB 数据表(PDF) 21 Page - Advanced Micro Devices

部件名 AM28F010A-90ECB
功能描述  1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
PDF  35 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM28F010A-90ECB 数据表(HTML) 21 Page - Advanced Micro Devices

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Am28F010A
21
DC CHARACTERISTICS over operating range unless otherwise specified
TTL/NMOS Compatible
Notes:
1. Caution: The Am28F010A must not be removed from (or inserted into) a socket when VCC or VPP is applied. If VCC ≤ 1.0
volt, the voltage difference between VPP and VCC should not exceed 10.0 volts. Also, the Am28F010A has a VPP rise time
and fall time specification of 500 ns minimum.
2. ICC1 is tested with OE# = VIH to simulate open outputs.
3. Maximum active power usage is the sum of ICC and IPP.
4. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VCC = VCC Max, VIN = VCC or VSS
±1.0
µA
ILO
Output Leakage Current
VCC = VCC Max, VOUT = VCC or VSS
±1.0
µA
ICCS
VCC Standby Current
VCC = VCC Max, CE# = VIH
0.2
1.0
mA
ICC1
VCC Active Read Current
VCC = VCC Max, CE# = VIL, OE# = VIH
IOUT = 0 mA, at 6 MHz
20
30
mA
ICC2
VCC Programming Current
CE = VIL Programming in Progress
(Note 4)
20
30
mA
ICC3
VCC Erase Current
CE
# = VIL
Erasure in Progress (Note 4)
20
30
mA
IPPS
VPP Standby Current
VPP = VPPL
±1.0
µA
IPP1
VPP Read Current
VPP = VPPH
70
200
µA
VPP = VPPL
±1.0
IPP2
VPP Programming Current
VPP = VPPH Programming in Progress
(Note 4)
10
30
mA
IPP3
VPP Erase Current
VPP = VPPH Erasure in Progress
(Note 4)
10
30
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2.0
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC Min
0.45
V
VOH1
Output High Voltage
IOH = –2.5 mA, VCC = VCC Min
2.4
V
VID
A9 Auto Select Voltage
A9 = VID
11.5
13.0
V
IID
A9 Auto Select Current
A9 = VID Max, VCC = VCC Max
5
50
µA
VPPL
VPP during Read-Only
Operations
Note: Erase/Program are inhibited
when VPP = VPPL
0.0
VCC +2.0
V
VPPH
VPP during Read/Write
Operations
11.4
12.6
V
VLKO
Low VCC Lock-out Voltage
3.2
3.7
V



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