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SRK2000D 数据表(PDF) 7 Page - STMicroelectronics |
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SRK2000D 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 17 page ![]() SRK2000 Electrical characteristics Doc ID 17811 Rev 2 7/17 Symbol Parameter Test condition Min. Typ. Max. Unit IEN Bias current VEN = VEN_On 1µA Turn-off threshold selection VEN-Th Selection threshold VCC = VCCOn 0.32 0.36 0.40 V IEN Pull-down current VEN = VEN_Th, VCC = VCCOn 710 13 µA Gate drivers VGDH Output high voltage IGDsource = 5 mA 11.75 11.9 V IGDsource = 5 mA, Vcc = 5 V 4.75 4.9 VGDL Output low voltage IGDsink = 200 mA 0.2 V IGDsink = 200 mA, Vcc = 5 V 0.2 Isourcepk Output source peak current -1 A Isinkpk Output sink peak current 3.5 A tf Fall time 18 ns tr Rise time 40 ns VGDclamp Output clamp voltage IGDsource = 5 mA; Vcc = 20 V 12 13 15 V VGDL_UVLO UVLO saturation Vcc = 0 to VCCon Isink = 5 mA 11.3 V 1. Parameters tracking each other. 2. For Vcc>30 V IDVS1,2_b may be greater than 1 µA because of the possible current contribution of the internal clamp Zener (few tens of µA). Table 5. Electrical characteristics (continued) |
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