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SRK2000D 数据表(PDF) 3 Page - STMicroelectronics |
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SRK2000D 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 17 page ![]() SRK2000 Pin description Doc ID 17811 Rev 2 3/17 1 Pin description Figure 2. Pin configuration Table 2. Pin description n. Name Function 1SGND Signal ground. Return of the bias current of the device and 0 V reference for drain-to-source voltage monitors of both sections. Route this pin directly to PGND. 2EN Drain voltage threshold setting for synchronous rectifier MOSFET turn-off. UVLO threshold programming. This pin is typically biased by either a pull-up resistor connected to Vcc or by a resistor divider sensing Vcc. Pulling the pin to ground disables the gate driver outputs GD1 and GD2 and can therefore be used also as Enable input. 3 4 DVS1 DVS2 Drain voltage sensing for sections 1 and 2. These pins are to be connected to the respective drain terminals of the corresponding synchronous rectifier MOSFET via limiting resistors. When the voltage on either pin goes negative, the corresponding synchronous rectifier MOSFET is switched on; as its (negative) voltage exceeds a threshold defined by the EN pin, the MOSFET is switched off. An internal logic rejects switching noise, however, extreme care in the proper routing of the drain connection is recommended. 5 7 GD2 GD1 Gate driver output for sections 2 and 1. Each totem pole output stage is able to drive Power MOSFETs with a peak current of 1 A source and 3.5 A sink. The high-level voltage of these pins is clamped at about 12 V to avoid excessive gate voltages in case the device is supplied with a high Vcc. 6PGND Power ground. Return for gate-drive currents. Route this pin to the common point where the source terminals of both synchronous rectifier MOSFETs are connected. 8Vcc Supply voltage of the device. A small bypass capacitor (0.1 µF typ.) to SGND, located as close to the IC’s pins as possible, may be useful to obtain a clean supply voltage for the internal control circuitry. A similar bypass capacitor to PGND, again located as close to the IC’s pins as possible, may be an effective energy buffer for the pulsed gate-drive currents. GD2 SGND EN DVS1 DVS2 Vcc GD1 PGND 1 2 3 4 8 7 6 5 GD2 SGND EN DVS1 DVS2 Vcc GD1 PGND 1 2 3 4 8 7 6 5 |
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