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ST8024LCDR 数据表(PDF) 12 Page - STMicroelectronics |
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ST8024LCDR 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 35 page ![]() Electrical characteristics ST8024L 12/35 Doc ID 17709 Rev 5 |ICC| Card supply current VCC = 0 to 5 V 80 mA VCC = 0 to 3 V 65 VCC = 0 to 1.8 V 45 VCC short-circuit to GND 90 120 SR Slew rate Slew up or down, VCC = 5 V; 3 V; 1.8 V; |ICC| < 30 mA 0.08 0.15 0.22 V/µs 1. VDD = 3.3 V, VDDP = 5 V, fXTAL = 10 MHz, unless otherwise noted. Typical values are at TA = 25 °C. (All parameters remain within limits but are tested only statistically for the temperature range. When a parameter is specified as a function of VDD or VCC it means their actual value at the moment of measurement.) 2. To meet these specifications, pin VCC should be decoupled to CGND using two 100 nF ceramic multilayer capacitors of max. 350 m Ω ESR. If V CC slew rate is not critical, the capacitance value can be up to 400 nF. (See Figure 10). Table 8. Card supply voltage characteristics (continued) Symbol Parameter(1) Test conditions Min. Typ. Max. Unit Table 9. Crystal connection (pins XTAL1 and XTAL2) Symbol Parameter(1) Test conditions Min. Typ. Max. Unit CXTAL1,2 External capacitance on pins XTAL1, XTAL2 Depends on type of crystal or resonator used - 15 pF fXTAL Crystal frequency 2 - 26 MHz fXTAL1 Frequency applied on pin XTAL1 0- 26 MHz VIH High level input voltage on pin XTAL1 0.7 VDD - VDD +0.3 V VIL Low level input voltage on pin XTAL1 -0.3 - +0.3 VDD V 1. VDD = 3.3 V, VDDP = 5 V, fXTAL = 10 MHz, unless otherwise noted. Typical values are at TA = 25 °C. Table 10. Data lines (pins I/O, I/OUC, AUX1, AUX2, AUX1UC, and AUX2UC) Symbol Parameter(1) Test conditions Min. Typ. Max. Unit tD(I/O-I/OUC), tD(I/OUC-I/O) I/O to I/OUC, I/OUC to I/O falling edge delay - - 200 ns tPU Active pull-up pulse width - - 100 ns fI/O(MAX) Maximum frequency on data lines -- 1 MHz CI Input capacitance on data lines - - 10 pF 1. VDD = 3.3 V, VDDP = 5 V, fXTAL = 10 MHz, unless otherwise noted. Typical values are at TA = 25 °C. |
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