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STM8L151F3P6 数据表(PDF) 69 Page - STMicroelectronics |
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STM8L151F3P6 数据表(HTML) 69 Page - STMicroelectronics |
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69 / 112 page ![]() STM8L151x2, STM8L151x3 Electrical parameters Doc ID 018780 Rev 4 69/112 Figure 18. Typical HSI frequency vs VDD Low speed internal RC oscillator (LSI) In the following table, data is based on characterization results, not tested in production. Table 30. LSI oscillator characteristics Symbol Parameter (1) 1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified. Conditions(1) Min Typ Max Unit fLSI Frequency 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time 200(2) 2. Guaranteed by design, not tested in production. µs IDD(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤ TA ≤ 85 °C -12 11 % 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 1.65 1.8 1.95 2.1 2.25 2.4 2.55 2.7 2.85 3 3.15 3.3 3.45 3.6 VDD [V] -40°C 25°C 90°C 130°C |
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