STPSC20H065CT datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STPSC20H065CT

功能描述	650 V power Schottky silicon carbide diode

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 8 page

This is information on a product in full production.

October 2012

Doc ID 023605 Rev 2

1/8

8

STPSC20H065C

650 V power Schottky silicon carbide diode

Datasheet

 production data

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Dedicated to PFC applications

■ High forward surge capability

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide bandgap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1.

Device summary

Symbol

Value

IF(AV)

2 x 10 A

VRRM

650 V

Tj (max)

175 °C

K (2)

A1 (1)

A2 (3)

A1

K

A2

A1

K

A2

TO-220AB

STPSC20H065CT

TO-247

STPSC20H065CW

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类似零件编号 - STPSC20H065CT

制造商	部件名	数据表	功能描述
STMicroelectronics	STPSC20H065CTY	156Kb / 9P	Dedicated to PFC applications 19-Sep-2014

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STPSC20H065CT 数据表(PDF) 1 Page - STMicroelectronics

STPSC20H065CT 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STPSC20H065CT

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STPSC20H065CT 数据表(PDF) 1 Page - STMicroelectronics

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类似零件编号 - STPSC20H065CT

类似说明 - STPSC20H065CT

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